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1. product pro?le 1.1 general description p-channel enhancement mode vertical diffusion metal-oxide semiconductor (dmos) transistor in a small surface-mounted device (smd) plastic package. [1] /dg: halogen-free 1.2 features 1.3 applications 1.4 quick reference data bss84 p-channel enhancement mode vertical dmos transistor rev. 06 16 december 2008 product data sheet table 1. product overview type number [1] package nxp jedec bss84 sot23 to-236ab bss84/dg n low threshold voltage n direct interface to cmos and transistor-transistor logic (ttl) n high-speed switching n no secondary breakdown n line current interrupter in telephone sets n relay, high-speed and line transformer drivers n v ds - 50 v n i d - 130 ma n r dson 10 w n p tot 250 mw
bss84_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 16 december 2008 2 of 11 nxp semiconductors bss84 p-channel enhancement mode vertical dmos transistor 2. pinning information 3. ordering information [1] /dg: halogen-free 4. marking [1] /dg: halogen-free [2] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china table 2. pinning pin symbol description simpli?ed outline graphic symbol 1 g gate sot23 (to-236ab) 2 s source 3 d drain 12 3 g d s 001aaa025 table 3. ordering information type number [1] package name description version bss84 to-236ab plastic surface-mounted package; 3 leads sot23 bss84/dg table 4. marking codes type number [1] marking code [2] bss84 13* bss84/dg zv*
bss84_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 16 december 2008 3 of 11 nxp semiconductors bss84 p-channel enhancement mode vertical dmos transistor 5. limiting values [1] device mounted on a printed-circuit board (pcb). table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage 25 c t j 150 c- - 50 v v gs gate-source voltage - 20 v i d drain current t sp =25 c; v gs = - 10 v; see figure 1 - - 130 ma t sp = 100 c; v gs = - 10 v - - 75 ma i dm peak drain current t sp =25 c; t p 10 m s; see figure 1 - - 520 ma p tot total power dissipation t sp =25 c; see figure 2 [1] - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 65 +150 c t sp =25 c (1) r dson limitation fig 1. safe operating area; continuous and peak drain currents as a function of drain-source voltage mld251 v ds (v) - 1 - 10 2 - 10 - 10 2 - 10 - 10 3 i d (ma) - 1 1 ms 10 ms 100 ms dc (1) t p = 10 m s 100 m s
bss84_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 16 december 2008 4 of 11 nxp semiconductors bss84 p-channel enhancement mode vertical dmos transistor 6. thermal characteristics [1] mounted on a pcb, vertical in still air. fig 2. power derating curve 0 200 300 0 100 200 mld199 t amb ( c) 50 100 150 p tot (mw) table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient see figure 3 [1] - - 500 k/w fig 3. transient thermal impedance from junction to ambient as a function of pulse duration 1 10 10 3 10 2 t p (s) 110 mld250 r th(j-a) (k/w) 10 - 1 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 2 10 3 10 - 1 d = 0.75 0.1 0 0.05 0.01 0.02 0.2 0.5 t p t p t p t t d =
bss84_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 16 december 2008 5 of 11 nxp semiconductors bss84 p-channel enhancement mode vertical dmos transistor 7. characteristics table 7. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = - 10 m a; v gs =0v - 50--v v gs(th) gate-source threshold voltage i d = - 1 ma; v ds =v gs ; see figure 8 t j =25 c - 0.8 - - 2v t j = - 55 c-- - 1.8 v i dss drain leakage current v ds = - 40 v; v gs =0v t j =25 c-- - 100 na v ds = - 50 v; v gs =0v t j =25 c-- - 10 m a t j = 125 c-- - 60 m a i gss gate leakage current v gs = +20 v; v ds = 0 v - - 100 na v gs = - 20 v; v ds = 0 v - - 100 na r dson drain-source on-state resistance v gs = - 10 v; i d = - 130 ma; see figure 5 and 7 -610 w dynamic characteristics | y fs | transfer admittance v ds = - 25 v; i d = - 130 ma 50--ms c iss input capacitance v gs =0v; v ds = - 25 v; f = 1 mhz; see figure 9 - 2545pf c oss output capacitance - 15 25 pf c rss reverse transfer capacitance - 3.5 12 pf t on turn-on time v ds = - 40 v; v gs =0v to - 10 v; i d = - 200 ma; see figure 10 and 11 -3-ns t off turn-off time v ds = - 40 v; v gs = - 10 v to 0 v; i d = - 200 ma; see figure 10 and 11 -7-ns
bss84_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 16 december 2008 6 of 11 nxp semiconductors bss84 p-channel enhancement mode vertical dmos transistor t j =25 ct j =25 c fig 4. output characteristics: drain current as a function of drain-source voltage; typical values fig 5. drain-source on-state resistance as a function of drain current; typical values t j =25 c; v ds = - 10 v (1) i d = - 130 ma; v gs = - 10 v (2) i d = - 20 ma; v gs = - 2.4 v fig 6. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 7. normalized drain-source on-state resistance factor as a function of junction temperature 0 - 2 - 10 - 12 - 600 - 200 0 - 400 mld197 - 4 - 6 - 8 v ds (v) v gs = - 10 v - 7.5 v - 6 v - 5 v - 4 v - 3 v - 2.5 v i d (ma) 60 0 40 - 1 mld198 - 10 - 10 2 - 10 3 20 i d (ma) r dson ( w ) v gs = - 2.5 v - 3 v - 7.5 v - 10 v - 5 v - 4 v 0 - 2 - 4 - 10 - 600 - 200 0 - 400 mld196 - 6 i d (ma) v gs (v) - 8 0.6 1.0 1.4 1.8 0 50 100 150 - 50 t j ( c) mld194 (1) (2) r dson r dson(25 c)
bss84_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 16 december 2008 7 of 11 nxp semiconductors bss84 p-channel enhancement mode vertical dmos transistor 8. test information i d = - 1 ma; v ds =v gs v gs = 0 v; f = 1 mhz fig 8. gate-source threshold voltage as a function of junction temperature fig 9. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 0.6 0.8 1.0 1.2 0 50 100 150 mld195 - 50 t j ( c) v gsth v gsth(25 c) 0 80 60 40 20 0 - 10 - 20 - 30 mld191 c (pf) v ds (v) c iss c oss c rss fig 10. switching time test circuit fig 11. input and output waveforms mld189 50 w v ds = - 40 v i d 0 v - 10 v mbb690 10 % 90 % 90 % 10 % t on t off output input
bss84_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 16 december 2008 8 of 11 nxp semiconductors bss84 p-channel enhancement mode vertical dmos transistor 9. package outline fig 12. package outline sot23 (to-236ab) unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 04-11-04 06-03-16 iec jedec jeita mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 to-236ab b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface-mounted package; 3 leads sot23
bss84_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 16 december 2008 9 of 11 nxp semiconductors bss84 p-channel enhancement mode vertical dmos transistor 10. revision history table 8. revision history document id release date data sheet status change notice supersedes bss84_6 20081216 product data sheet - bss84_5 modi?cations: ? t ab le 5 limiting v alues : p tot ?gure reference updated bss84_5 20081209 product data sheet - bss84_4 bss84_4 20070717 product data sheet - bss84_3 bss84_3 20030804 product speci?cation - bss84_2 bss84_2 19970618 product speci?cation - bss84_1 bss84_1 19950407 product speci?cation - -
bss84_6 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 06 16 december 2008 10 of 11 nxp semiconductors bss84 p-channel enhancement mode vertical dmos transistor 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 11.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 11.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 12. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors bss84 p-channel enhancement mode vertical dmos transistor ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 16 december 2008 document identifier: bss84_6 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 13. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 legal information. . . . . . . . . . . . . . . . . . . . . . . 10 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 11.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 contact information. . . . . . . . . . . . . . . . . . . . . 10 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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